Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition
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Stress control of plasma enhanced chemical vapor deposited silicon oxide film from tetraethoxysilane
Thin silicon dioxide films have been studied as a function of deposition parameters and annealing temperatures. Films were deposited by tetraethoxysilane (TEOS) dual-frequency plasma enhanced chemical vapor deposition with different time interval fractions of high-frequency and low-frequency plasma depositions. The samples were subsequently annealed up to 930 ◦C to investigate their stress beha...
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Ultrathin ( 1.9 nm) nitride/oxide (N/O) dual layer gate dielectrics have been prepared by the remote plasma enhanced chemical vapor deposition (RPECVD) of Si3N4 onto oxides. Compared to PMOSFET’s with heavily doped p-poly-Si gates and oxide dielectrics, devices incorporating the RPECVD stacked nitrides display reduced tunneling current, effectively no boron penetration and improved interface ch...
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The Si-rich silicon oxide (SiOx) thin films are prepared on silicon crystalline substrates by low pressure chemical vapor deposition (LPCVD) method. The oxygen concentration x are controlled by the ratio of the partial pressures of N2O and SiH4 gases in the reaction chamber. In order to induce the phase separation on SiO2 and Si nanostructures the samples are annealed at the temperatures 900– 1...
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